JSSC 2021第2期Power Management0.35µm HV BCDNeural Network Accelerator

A 10-MHz Closed-Loop EMI-Regulated GaN Switching Power Converter Using Emulated Miller Plateau Tracking and Adaptive Strength

提出一种10MHz闭环EMI调节GaN开关电源转换器，通过模拟米勒平台跟踪和自适应栅极驱动优化EMI与效率。

10MHz, 5V输出, 6W功率范围, 5-40V输入, 峰值效率81.4%

EMI调节GaN开关电源米勒平台跟踪自适应栅极驱动高频转换器

▸创新点1：模拟米勒平台跟踪方案（方法创新） - 通过实时监测功率晶体管栅极电压的米勒平台阶段，精准识别开关过程中易受负载电流和输入电压影响的di/dt和dv/dt关键时间点，为EMI优化提供时间窗口。该技术解决了传统开环控制无法动态适应工况变化的问题。

▸创新点2：自适应强度栅极驱动方案（电路创新） - 采用可编程驱动电流技术，在米勒平台阶段自动调节栅极驱动强度，实现低di/dt（降低传导EMI）与高dv/dt（减少开关损耗）的协同优化。实测显示该方案在30MHz以下频段降低EMI达19.23dBμV。

▸创新点3：闭环EMI调节系统架构（系统创新） - 将EMI频谱特征反馈与开关时序控制形成闭环，动态调整驱动参数。系统在5-40V宽输入范围内维持70%以上效率（峰值81.4%），仅牺牲2.44%效率代价即实现全频段EMI抑制。

▸创新点4：高频集成化实现（工艺创新） - 在0.35μm BCD工艺上实现10MHz开关频率的GaN功率转换器，通过片上集成EMI传感器与调节电路，在6W功率范围内达成95.8%工作区间的效率优化。

Abstract

There has been a classic design trade-off between electromagnetic interference (EMI) and power efﬁciency in switching power circuits historically. This work explores the technical strategies that well balance this trade-off. In particular, an emulated Miller plateau tracking scheme is proposed to identify critical di/dt and dv/dt instants, which are susceptible to load current and power input voltage conditions. An adaptive strength gate driving scheme facilitates low di/dt and high dv/dt switching operation, which leads to the targeted EMI and switching loss optimization. A switching power converter IC prototype was implemented in a 0.35- µm high-voltage (HV) Bipolar-CMOS-DMOS (BCD) process. Operating at 10 MHz, the converter regulates an output at 5 V with 6-W power range, accommodating a wide input supply voltage ranging from 5 to 40 V . It achieves above 70% efﬁciency over 95.8% of the full power range, with a peak efﬁciency of 81.4% at 1.25 W. With the proposed strategies, the peak EMI of the converter is reduced by 19.23 dB µVi nB a n dB( <30 MHz) and 9 dB µVi nB a n dC / D (>30 MHz), with only 2.44% efﬁciency penalty.