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JSSC 2021第2期RF & Wireless65nm

Terahertz Even-Order Subharmonic Mixer Using Symmetric MOS V aractors

采用对称MOS变容器的560GHz射频前端在四阶次谐波混频模式下实现了35dB的单边带噪声系数。
65nm CMOS, 35dB SSB NF (fourth-order SHM), 45dB SSB NF (sixth-order SHM), 60dB SSB NF (tenth-order SHM)
太赫兹次谐波混频器对称MOS变容器射频前端噪声系数
▸首次在混频器中使用对称MOS变容器
▸实现了1.2THz的最高射频频率
▸基于参数放大理论解释测量结果
Abstract
A 560-GHz radio frequency (RF) front-end employ- ing an accumulation mode MOS symmetric varactor (SV AR) subharmonic mixer achieves a minimum single sideband (SSB) noise figure (NF) of 35 dB in the fourth-order subharmonic mixing (SHM) mode which is 5 dB lower than that of SiGe HBT mixers. The front-end fabricated in 65-nm CMOS also achieves 45-dB SSB NF for sixth-order SHM at RF = 810 GHz and 60-dB SSB NF for tenth-order SHM at RF =1.2 THz. Use of SV ARs in a mixer is the first and the 1.2-THz RF