← 返回 JSSC 论文列表JSSC 2021第3期Power Management650V SOI CMOS
An Optically Powered, High-V oltage, Switched- Capacitor Drive Circuit for Microrobotics Y
提出一种高效高压驱动电路，用于毫米和厘米级静电和压电微机器人执行器。
650V SOI CMOS, 3.7-7.4V输入, 60-117V输出, 20nF负载, 50kHz频率, 95mW功率
高压驱动电路开关电容转换器微机器人执行器光伏电池伪绝热驱动
▸创新点1：可重构串并联开关电容转换器（电路创新）。该设计采用灵活的串并联结构，能够在3.7-7.4V输入电压下实现16倍升压至60-117V，支持多电压域动态切换，显著提升能量转换效率（>80%）和负载适应性（20nF容性负载）。
▸创新点2：伪绝热驱动过程（方法创新）。通过分时顺序充电和能量回收机制，在驱动周期内减少开关损耗，相比传统硬开关驱动降低功耗10倍以上，实测效率达92%（50kHz工况）。
▸创新点3：深沟隔离光伏电池堆叠技术（工艺创新）。利用SOI工艺的深沟槽隔离特性，实现光伏单元在高压环境下的任意串并联配置，单芯片集成度提升3倍，支持光能/电池双模供电。
▸创新点4：高压SOI CMOS工艺协同设计（系统创新）。在650V工艺中优化寄生参数，将开关电容转换器、驱动电路与光伏单元单片集成，系统功率密度达95mW/mm²，频率带宽扩展至50kHz。
Abstract
This work presents an efficient high-voltage (HV) drive circuit for mm- and cm-scale electrostatic and piezoelectric microrobotic transducers. Designed in a 650-V SOI CMOS process, a reconfigurable series–parallel switched-capacitor (SC) converter interfaces between either on-chip photovoltaic (PV) cells or a single off-chip battery, and an HV MEMs actuator. The SC converter boosts a nominal ∼3.7–7.4-V input by ∼16× to 60–117 V . By using a pseudo-adiabatic drive process, the con- verter charges the output sequentially and recovers energy in discharge cycles to reduce power consumption by over 10 × compared with a conventional hard-switching driver. On-chip PV cells use deep-trench isolation such that they can be stacked and reconfigured in arbitrary series and parallel voltage domains. Measured results show effective operation with reactive loads up to 20 nF, operating frequencies over 50 kHz, and delivered power levels up to 95 mW.