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JSSC 2021第3期RF & Wireless28nm

High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Searc

提出高密度3D可堆叠2D2R nvTCAM,结合机器学习实现低功耗智能搜索。
28nm CMOS, 2ns匹配延迟, 70%搜索能耗降低
nvTCAMReRAM3D堆叠智能搜索低功耗
2D2R nvTCAM单元提高存储密度
后端集成二极管和ReRAM电阻实现3D堆叠
利用K-means聚类实现智能搜索降低功耗
Abstract
By virtue of hardware parallelism, ternary content addressable memory (TCAM) is attractive for low-latency search for packet forwarding in routers for network communications in the upcoming fifth-generation (5G) era. However, the demand for high-density TCAM encounters remarkable costs in silicon area and power consumption. In this work, a 16-kb nonvolatile ternary content addressable memory (nvTCAM) test chip based on resistive memory (ReRAM) is demonstrated in 28-nm process with two techniques