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Z-PIM: A Sparsity-Aware Processing-in-Memory Architecture With Fully V ariable Weight Bit-Precision for Energy-Efficient Deep
Z-PIM是一种支持稀疏性和可变位精度的内存处理架构,用于高效能深度神经网络。
65nm CMOS, 1.0V, 200MHz, 5.294mW
内存处理稀疏性可变位精度能效深度神经网络
▸稀疏性处理:Z-PIM通过零跳过卷积SRAM技术实现高效的稀疏性处理,显著减少无效计算,提升能效比。具体采用通道级数据映射和跳过零权重输入通道的方法,在VGG-16模型中实现95.42%的开关率降低(系统创新)。
▸全可变位精度:采用位串行算术(bit-serial arithmetic)技术,支持1至16比特的完全可变权重精度,通过多周期逐比特乘法降低单周期操作复杂度,兼顾灵活性与能效(方法创新)。
▸层次化位线结构:提出分层位线设计以减少寄生电容,结合电荷复用方案,显著降低卷积层能耗。实测显示该结构在1.0V/200MHz下仅消耗5.294mW,能效达0.31-49.12 TOPS/W(电路创新)。
▸零跳过卷积SRAM:基于定制8T-SRAM单元实现原位AND运算与通道级累加,配合对角线累加SRAM完成空间/比特级累加,最终输出卷积结果。该设计通过读操作流水线化提升66.1%吞吐量(架构创新)。
Abstract
We present an energy-efficient processing-in- memory (PIM) architecture named Z-PIM that supports both sparsity handling and fully variable bit-precision in weight data for energy-efficient deep neural networks. Z-PIM adopts the bit-serial arithmetic that performs a multiplication bit-by-bit through multiple cycles to reduce the complexity of the operation in a single cycle and to provide flexibility in bit-precision. To this end, it employs a zero-skipping convolution SRAM, which performs in-memory AND operations based on custom 8T-SRAM cells and channel-wise accumulations, and a diagonal accumula- tion SRAM that performs bit- and spatial-wise accumulation on the channel-wise accumulation results using diagonal logic and adders to produce the final convolution outputs. We propose the hierarchical bitline structure for energy-efficient weight bit pre- charging and computational readout by reducing the parasitic capacitances of the bitlines. Its charge reuse scheme reduces the switching rate by 95.42% for the convolution layers of VGG-16 model. In addition, Z-PIM’s channel-wise data mapping enables sparsity handling by skip-reading the input channels with zero weight. Its read-operation pipelining enabled by a read- sequence scheduling improves the throughput by 66.1%. The Z-PIM chip is fabricated in a 65-nm CMOS process on a 7.568-mm 2 die, while it consumes average 5.294-mW power at 1.0-V voltage and 200-MHz frequency. It achieves 0.31–49.12-TOPS/W energy efficiency for convolutio