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JSSC 2021第7期Memory65nm

A 0.44-μJ/dec, 39.9-μs/dec, Recurrent Attention In-Memory Processor for Keyword Spotting Hassan Dbouk , Student Member , IEEE, Sujan K. Gonugondla , Member , IEEE

65nm CMOS工艺下基于深度学习的低功耗关键词识别芯片
65nm CMOS, 39.9µs决策延迟, <0.5µJ/dec决策能耗
关键词识别内存计算深度学习能效优化硬件算法协同设计
提出KeyRAM算法,通过置信度计算降低计算复杂度
采用内存计算架构与数字协处理器结合,提升能效
提出稀疏感知求和方案,优化稀疏激活计算
Abstract
This article presents a deep learning-based classifier IC for keyword spotting (KWS) in 65-nm CMOS designed using an algorithm-hardware co-design approach. First, a recur- rent attention model (RAM) algorithm for the KWS task (the KeyRAM algorithm) is proposed. The KeyRAM algorithm enables accuracy versus energy scalability via a confidence-based computation (CC) scheme, leading to a 2 .5× reduction in compu- tational complexity compared to state-of-the-art (SOTA) neural networks, and is well-suited for in-memory computing (IMC) since the bulk (89%) of its computations are 4-b matrix-vector multiplies. The KeyRAM IC comprises a multi-bit multi-bank IMC architecture with a digital co-processor. A sparsity-aware summation scheme is proposed to alleviate the challenge faced by IMCs when summing sparse activations. The digital co-processor employs diagonal major weight storage to compute without any stalls. This combination of the IMC and digital processors enables a balanced tradeoff between energy efficiency and high accuracy computation. The resultant KWS IC achieves SOTA decision latency of 39.9 µs with a decision energy <0.5 µJ/dec which translates to more than 24 × savings in the energy-delay product (EDP) of decisions over existing KWS ICs.