A 05-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Bu

Abstract

This article introduces an SRAM-based physically unclonable function (PUF) that employs hybrid-mode operations in the enhancement–enhancement (EE) SRAM mode and CMOS SRAM mode to achieve both high native stability and low power. A data latching scheme based on the hybrid structure enables operations under low supply voltage (V DD). Furthermore, the proposed hybrid SRAM PUF is compatible with hot carrier injection (HCI) burn-in stabilization, which can reinforce PUF stability to ∼100% without the