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JSSC 2021第7期Other180nm

A Bidirectional Neural Interface SoC With Adaptive IIR Stimulation Artifact Canc

一款180nm CMOS双向神经接口SoC，采用自适应IIR滤波器消除刺激伪迹，实现同步记录与刺激。
180nm CMOS, 2.5µW/通道, 50dB增益, 9.0kHz带宽, 6.2µVrms噪声
双向神经接口刺激伪迹消除自适应IIR滤波器LMS引擎同步记录与刺激
▸采用LMS引擎自适应调整双抽头IIR滤波器系数以消除刺激伪迹
▸支持双片上刺激器同时工作时的伪迹消除
▸前端伪迹消除方案可处理高达700mVpp的刺激伪迹
Abstract
We present a 180-nm CMOS bidirectional neural interface system-on-chip that enables simultaneous recording and stimulation with on-chip s timulus artifact cancelers. The front-end (FE) cancellation scheme incorporates a least-mean- squares (LMS) engine that adapts the coefficients of a two- tap infinite-impulse-response filter to replicate the stimulation artifact waveform and subtract it at the FE. Measurements demonstrate the efficacy of the canceler in mitigating artifacts up to 700 mV pp and red