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A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applicatio
报道了一种基于40nm CMOS工艺的低温宽带低噪声放大器,用于量子应用。
40nm CMOS, 4.1-7.9 GHz, 0.23-0.65 dB NF, 39-51.1 mW
低温宽带低噪声放大器CMOS量子应用
▸利用输入晶体管的栅漏电容实现宽带输入匹配和低噪声
▸采用LC并联谐振电路扩展带宽
▸通过变压器谐振器实现双谐振频率负载
Abstract
A cryogenic broadband low noise amplifier (LNA)
for quantum applications based on a standard 40-nm CMOS
technology is reported. The LNA specifications are derived from
the readout of semiconductor quantum bits at 4.2 K, whose quan-
tum information signals are characterized as phase-modulated
signals. To achieve broadband input matching impedance and low
noise figure, the gate-to-drain capacitance of the input transistor
is exploited. The goal is to involve a resistive and capacitive
load into the i