← 返回 JSSC 论文列表JSSC 2021第9期Memory28nmSRAMCIM
A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC
提出一种基于6T SRAM的内存计算宏,提升边缘设备多比特乘加运算能效
28nm CMOS, 4.1-8.4ns访问时间, 11.5-68.4 TOPS/W能效
内存计算6T SRAM乘加运算边缘计算能效优化
▸权重位乘加运算(WbwMAC)扩展感知裕度
▸紧凑型6T本地计算单元抑制工艺偏差
▸自适应低MAC感知读出算法提升能效
▸位线头部选择方案增大信号裕度
▸小偏移裕度增强型灵敏放大器提升读取稳定性
Abstract
This article presents a computing-in-memory (CIM)
structure aimed at improving the energy efficiency of edge devices
running multi-bit multiply-and-accumulate (MAC) operations.
The proposed scheme includes a 6T SRAM-based CIM (SRAM-
CIM) macro capable of: 1) weight-bitwise MAC (WbwMAC)
operations to expand the sensing margin and improve the readout
accuracy for high-precision MAC operations; 2) a compact 6T
local computing cell to perform multiplication with suppressed
sensitivity to process vari