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JSSC 2021第9期Memory28nmSRAMCIM

A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC

提出一种基于6T SRAM的内存计算宏,提升边缘设备多比特乘加运算能效
28nm CMOS, 4.1-8.4ns访问时间, 11.5-68.4 TOPS/W能效
内存计算6T SRAM乘加运算边缘计算能效优化
权重位乘加运算(WbwMAC)扩展感知裕度
紧凑型6T本地计算单元抑制工艺偏差
自适应低MAC感知读出算法提升能效
位线头部选择方案增大信号裕度
小偏移裕度增强型灵敏放大器提升读取稳定性
Abstract
This article presents a computing-in-memory (CIM) structure aimed at improving the energy efficiency of edge devices running multi-bit multiply-and-accumulate (MAC) operations. The proposed scheme includes a 6T SRAM-based CIM (SRAM- CIM) macro capable of: 1) weight-bitwise MAC (WbwMAC) operations to expand the sensing margin and improve the readout accuracy for high-precision MAC operations; 2) a compact 6T local computing cell to perform multiplication with suppressed sensitivity to process vari