Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz Takaaki Y oshioka , Kenji Harauchi, Takumi Sugitani, Hiroaki Maehara, Takashi Y amasaki, Hiroaki Ichinohe

Abstract

This study describes the Ku-band 70- and 30-W-class internally matched gallium nitride (GaN) power amplifiers (PAs) for multi-carrier satellite communications (SatComs). The GaN PAs maintain low third-order intermod- ulation distortion (IMD3) over a wide offset frequency range of up to 400 MHz, whereas in the Ku-band, one PA can deliver a high peak output power of approximately 70 W and the other PA, a peak output power of higher than 30 W. To realize a wide offset frequency operation, our proposed output-matching circuit includes three different types of difference-frequency short circuits, two of which are embedded into a tournament-shaped output-matching circuit inside the PA package and the rest is embedded into the drain bias feed placed outside the package. To verify the short-circuit design and its effectiveness, two different power classes (70 and 30 W), Ku-band GaN PAs, were designed and fabricated, and then, their output transfer char- acteristics focusing on IMD3 were measured. The measurements show that the 70-W-class GaN PA achieves a peak output power of 48.6 dBm while maintaining a linear output power of over 40 dBm and an IMD3 of less than −26 dBc over wide offset frequencies ranging from 1 to 400 MHz. The 30-W-class GaN PA maintains a linear output power of over 36.3 dBm and an IMD3 of less than −27 dBc over wide offset frequencies of up to approximately 600 MHz. To the best of the authors’ knowledge, these PAs have a record output power level over a wide freq