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A Single-Trim Frequency Reference Achieving 120 ppm Accuracy From 50 C to 170 C
单次修调Colpitts频率基准在-50°C至170°C实现±120ppm精度
0.13µm SOI CMOS, 2.5V, 3.5mW, 220ppm/V电源灵敏度
频率基准Colpitts振荡器单次修调高温稳定性SOI工艺
▸Colpitts拓扑相比交叉耦合LC拓扑具有更优温度稳定性
▸单次室温修调结合批次校准实现±120ppm精度
▸老化测试后频率漂移低于100ppm
Abstract
A single-trim, highly accurate Colpitts-based
frequency reference is presented. Our analysis shows that the
Colpitts-topology outp erforms the cross-coupled LC-topology in
terms of temperature stability. Measurements on prototypes
in a 0.13- µm high-voltage CMOS silicon on insulator (SOI)
process were carried out from −50
◦C to 170 ◦C. Based
on sample-specific single room temperature trim and batch
calibration, our frequency reference achieves an accuracy of
±120 ppm for 16 samples from a single