A Single-Trim Frequency Reference Achieving ±120 ppm Accuracy From − 50 ◦C to 170 ◦C Alexander S. Delke , Student Member , IEEE

Abstract

A single-trim, highly accurate Colpitts-based frequency reference is presented. Our analysis shows that the Colpitts-topology outp erforms the cross-coupled LC-topology in terms of temperature stability. Measurements on prototypes in a 0.13- µm high-voltage CMOS silicon on insulator (SOI) process were carried out from −50 ◦C to 170 ◦C. Based on sample-specific single room temperature trim and batch calibration, our frequency reference achieves an accuracy of ±120 ppm for 16 samples from a single wafer utilized for extracting the batch-calibration polynomial and ±300 ppm for 48 samples across three wafers from the same batch. This is a 4 × improvement over related single-trim state-of-the-art solutions. Frequency drift due to aging, tested after a six-day 175 ◦C storage, is below 100 ppm. The oscillator core dissipates 3.5 mW from a 2.5-V supply and has 220-ppm/V s upply sensi- tivity without supply regulation.