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Design and Characterization of a 10-MHz GaN Gate Driver Using On-Chip Feed-Forwa
本文设计了一种10MHz GaN栅极驱动器，采用前馈分段驱动方案，有效降低EMI噪声。
10-MHz, 4- to 40-V, 85.2% efficiency
GaNEMI抑制高斯开关扩频频率抖动前馈分段驱动
▸首次在GaN功率开关中实现高斯开关方案
▸采用扩频频率抖动技术压缩低频域噪声
▸提出前馈分段驱动方案生成精确高斯轨迹
Abstract
Aiming at electromagnetic interference (EMI) sup-
pression for multiple applications, this article demonstrates a
10-MHz 4- to 40-V V
IN, gallium nitride (GaN)-based buck
converter with multiple EMI reduction techniques. A Gaussian
switching scheme is realized on chip for the first time for
GaN power switches to effectively reduce the conducted EMI
level in the high-frequency domain. Meanwhile, spread-spectrum
frequency dithering (SSFD) technique is adopted to compress the
spurious switching nois