← 返回 JSSC 论文列表JSSC 2021第12期Power Management0.18-µm BCD
A 12-Level Series-Capacitor 48-1 V DCDC Converter With On-Chip Switch and GaN Hy
一款采用12级串联电容和GaN混合功率转换的48-1V DC-DC转换器，具有高开关频率和功率密度。
0.18-µm BCD, 36-60V输入, 0.5-1V输出, 8A负载, 90.2%峰值效率, 998A/in³功率密度
DC-DC转换器GaN开关电容功率密度片上开关
▸12级Dickson开关电容与两相开关电感电路串联
▸片上开关与GaN混合功率转换
▸降低等效电压至4-1V，适用5V晶体管
Abstract
This work presents a 48-1 V dc–dc converter with an
on-chip switch and gallium nitride (GaN) hybrid power conver-
sion. By series connecting a 12-level Dickson switched-capacitor
with a two-phase switched-inductor circuit, the capacitors take
over most of the 48-V voltage stresses. The circuit, thus, reduces
to an equivalent 4-1 V converter, making the on-chip 5-V tran-
sistor applicable for a 48-V high-voltage design. Due to the easy
integration of on-chip switches and superior switch figures of