▸创新点1：温度补偿控制器（电路创新）。该控制器通过内部温度补偿机制，确保在不同温度下开关的稳定性和高效性，显著提升了系统的可靠性和性能。
▸创新点2：集成驱动与开关（系统创新）。采用12V耗尽模式GaN和增强模式GaN的单片集成设计，实现了驱动与开关的高度集成，简化了系统结构，提高了整体效率。
▸创新点3：快速开启技术（方法创新）。通过快速开启技术（FTO）和片上稳压器，实现了高速开关操作，开关频率可达50MHz，dVDS/dt斜率高达118.3V/ns，显著提升了系统的高效性和高速性能。
▸创新点4：Miller平台电压跟踪（电路创新）。提出的控制器能够准确跟踪Miller平台电压，确保开关过程中的精确控制，进一步提高了系统的稳定性和效率。
Abstract
In this article, a monolithically integrated driver
fabricated by 12-V depletion mode gallium nitride (dGaN)
and enhanced mode GaN (eGaN) driver is proposed. The
proposed driver features an internal temperature-compensated
(T-compensated) controller to drive an integrated 650-V eGaN
power switch. Due to T-compensated characteristics, a slew-rate
enhancement driver can be well-controlled by the fast turn-on
(FTO) technique which is supplied by an on-chip regulator with
reference voltage circuit.