JSSC 2021第12期Other

Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns Yu-Yung Kao, Student Member , IEEE, Sheng-Hsi Hung, Hsuan-Yu Chen, Jia-Jyun Lee

提出了一种集成温度补偿控制器的12V GaN驱动器和650V GaN开关，支持50MHz高频操作。

50MHz, 118.3 V/ns

GaN温度补偿高频开关集成驱动快速开启

▸创新点1：温度补偿控制器（电路创新）。该控制器通过内部温度补偿机制，确保在不同温度下开关的稳定性和高效性，显著提升了系统的可靠性和性能。

▸创新点2：集成驱动与开关（系统创新）。采用12V耗尽模式GaN和增强模式GaN的单片集成设计，实现了驱动与开关的高度集成，简化了系统结构，提高了整体效率。

▸创新点3：快速开启技术（方法创新）。通过快速开启技术（FTO）和片上稳压器，实现了高速开关操作，开关频率可达50MHz，dVDS/dt斜率高达118.3V/ns，显著提升了系统的高效性和高速性能。

▸创新点4：Miller平台电压跟踪（电路创新）。提出的控制器能够准确跟踪Miller平台电压，确保开关过程中的精确控制，进一步提高了系统的稳定性和效率。

Abstract

In this article, a monolithically integrated driver fabricated by 12-V depletion mode gallium nitride (dGaN) and enhanced mode GaN (eGaN) driver is proposed. The proposed driver features an internal temperature-compensated (T-compensated) controller to drive an integrated 650-V eGaN power switch. Due to T-compensated characteristics, a slew-rate enhancement driver can be well-controlled by the fast turn-on (FTO) technique which is supplied by an on-chip regulator with reference voltage circuit. Therefore, the Miller plateau voltage can be tracked correctly by the proposed controller so that the switching frequency can be raised up to 50 MHz and the dV DS/dt slew rate can reach 118.3 V/ns for high efﬁciency and high switching operation.