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A 24-Gb/s/Pin 8-Gb GDDR6 With a Half-Rate Daisy-Chain-Based Clocking Architecture and I/O Circuitry for Low-Noise Operation
提出一种基于半速率时钟架构的GDDR6 DRAM,实现24 Gb/s/pin的高带宽性能。
24 Gb/s/pin, 1.35-V DRAM, PSIJ从9.97 ps降至3.22 ps
GDDR6半速率时钟高带宽RDL相位失配
▸创新点1:半速率时钟架构(方法创新) - 采用半速率时钟架构替代传统的四分之一速率架构,显著降低了相位失配和电源引起的抖动(PSIJ),PSIJ值从9.97 ps优化至3.22 ps,同时支持24 Gb/s/pin的高速数据传输。
▸创新点2:优化的接收器和发射器(电路创新) - 通过优化接收器和发射器设计,提升了高速操作的稳定性和效率,确保了在1.35-V DRAM工艺下实现24 Gb/s/pin的高带宽性能。
▸创新点3:采用RDL的错位PAD设计(系统创新) - 利用 redistribution layer (RDL) 技术实现错位PAD布局,缩短了与四个PAD的距离,从而降低了带宽限制、相位失配和传播延迟,相位失配的3-σ值从4.16 ps改善至2.25 ps。
▸创新点4:时钟分布网络(CDN)优化(电路创新) - 通过改进时钟分布网络的设计,进一步减少了相位失配,提升了系统的整体时序精度和信号完整性。
Abstract
The demand for high-performance graphics sys- tems used for artificial intelligence, cloud game, and virtual reality continues to grow; this trend requires graphics systems to achieve ever higher bandwidths. This article proposes a GDDR6 dynamic random access memory (DRAM) with a half- rate clocking architecture and optimized receiver and transmitter to improve high-speed operation. Furthermore, this article adopts a staggered PAD using the redistribution layer (RDL) to reduce the distance to four PADs; it enables the mitigation of bandwidth limitation of half-rate clocking, a lower phase mismatch, and a reduced propagation delay. The proposed half-rate clocking- based GDDR6 DRAM achieves 24 Gb/s/pin on a 1.35-V DRAM process. Also, the power-supply-induced-jitter (PSIJ) value is improved from 9.97 to 3.22 ps, compared to a GDDR6 design using a quarter-rate clocking. In addition, the phase mismatch of the proposed clock distribution network (CDN) is reduced compared to the conventional CDN, resulting in an improvement of the 3- σ value of the phase skew from 4.16 to 2.25 ps.