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JSSC 2022第1期Memory28nmSRAM

In-Memory Unified TRNG and Multi-Bit PUF for Ubiquitous Hardware Security Sachin

一种SRAM架构,集成真随机数生成器和多比特物理不可克隆功能,实现低成本硬件安全。
28nm CMOS, 12.5µm²/输出流, 12.6Gbps, 72fJ/bit
SRAM真随机数生成器物理不可克隆功能硬件安全位线放电
在SRAM中集成TRNG和多比特PUF
利用位线放电速率提取多比特PUF
能量控制环路抵消温度波动影响
Abstract
This work describes an SRAM architecture with in-memory generation of both dynamic and multi-bit static entropy. This inexpensively extends complete key generation capabilities to any system that includes an SRAM, and hence ubiquitously down to tightly constrained and very low cost. The array embeds a true random number generator (TRNG) and a physically unclonable function (PUF), while using a commercial bitcell and periphery all-digital pitch-matched augmentation to retain the simplicity of mem