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JSSC 2022第1期Wireline I/O10-nm FinFET, 28-nm CMOS, 7-nm FinFET

Introduction to the Special Section on the 2021 IEEE International Solid-State C

2021年IEEE ISSCC精选论文特辑，涵盖有线、数字电路、机器学习等多个领域的前沿研究。
224-Gb/s, 200-Gb/s, 112-Gb/s
IEEE ISSCCPAM4FinFETCMOS机器学习
▸224-Gb/s PAM4发射机
▸200-Gb/s PAM4发射机
▸112-Gb/s PAM4接收机
Abstract
pecial Section of the IEEE J OURNAL OF SOLID - STATE CIRCUITS is dedicated to a collection of the best articles selected from the 2021 IEEE International Solid-State Circuits Conference (ISSCC) that took place on February 13–22, 2021, in San Francisco, CA, USA. This Special Section covers articles from the Wireline, Digital Circuits, Digital Architectures and Systems (DASs), Machine Learning and AI, and Memory Committees. II. W IRELINE ARTICLES Our wireline selection includes a mix of industry a