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JSSC 2022第2期mm-Wave65nm

A 0.45-THz 2-D Scalable Radiator Array With 28.2-dBm EIRP Using an Elliptical Teflon Lens

提出一种新型2D可扩展辐射器阵列,通过优化设计和集成方法,在硅基THz源中实现了最高EIRP和效率。
28.2-dBm EIRP at 452.3 GHz, 0.16% dc-to-THz efficiency, 4.6% frequency tuning range
太赫兹辐射器硅基THz源可扩展阵列EIRP优化特氟龙透镜
创新点1:4×4槽天线阵列优化设计(方法创新)。通过硅基板加载优化,实现了高达449.8 GHz的高辐射效率(-2.4 dBm辐射功率)和良好辐射模式,无需传统硅透镜,降低了系统复杂度。
创新点2:新型2D可扩展耦合谐波振荡器阵列(电路创新)。作为激励网络,采用二次谐波生成优化设计,在65nm CMOS工艺下实现0.55mm²核心面积,提供373mW直流功耗下0.16%的DC-THz转换效率,支持4.6%频率调谐范围。
创新点3:低成本特氟龙透镜系统集成(系统创新)。通过椭圆特氟龙透镜与天线阵列协同设计,在452.3 GHz实现28.2-dBm EIRP(峰值29.1 dBm@458.3 GHz),显著提升波束指向性且成本低于传统方案。
创新点4:高相位噪声性能(电路创新)。在452.3 GHz工作频率下测得-76.4 dBc/Hz@1MHz偏移的相位噪声,为硅基THz源提供了优异的信号纯度。
Abstract
This article presents a novel coherent, scalable radiator array achieving the highest effective isotropic radiated power (EIRP) and highest dc-to-terahertz (THz) efficiency among silicon-based scalable THz sources beyond 400 GHz through co- design and optimization methods of the THz power generation and radiation. First, a 4 × 4 slot antenna array with silicon substrate loading is optimized for high radiation efficiency and good radiation pattern without silicon lens. A low-cost Teflon lens is introduced and effectively illuminated by the radiator achieving a highly directive beam. Second, a novel 2-D scalable coupled harmonic oscillator array is proposed as the excitation network to feed the antenna array. The oscillator is optimized for the second- harmonic generation to provide high output power and efficiency. The chip is fabricated in a 65-nm CMOS process, and the core area of the chip is 0.55 mm 2. The radiated power of −2.4 dBm and 8.8-dBm EIRP are achieved at 449.8 GHz with 373-mW dc power consumption and 0.16% dc-to-THz efficiency under 1.2-V supply voltage. By adding an elliptical Teflon lens, 28.2-dBm EIRP is measured at 452.3 GHz under 1.2-V supply voltage, and a maximum EIRP of 29.1 dBm is measured at 458.3 GHz with 1.4-V supply voltage. By changing the bias and supply voltages, a 4.6% frequency tuning range is achieved. At 452.3 GHz, the measured phase noise is −76.4 dBc/Hz at 1-MHz offset.