← 返回 JSSC 论文列表JSSC 2022第2期mm-Wave130nm SiGe BiCMOS
A High-Efficiency 142182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-B
提出一种基于槽线的高效宽带毫米波功率放大器，采用新型功率合成技术实现高输出功率和低损耗。
峰值功率增益30.7dB，饱和输出功率18.1dBm，峰值效率12.4% @161GHz
毫米波功率放大器槽线功率合成SiGe BiCMOS宽带设计高效率
▸基于槽线的宽带功率合成技术
▸紧凑型四合一混合功率合成器设计
▸低插入损耗（0.5dB）和大带宽（80GHz）
Abstract
In this article, a high-efficiency broadband
millimeter-wave (mm-Wave) integrated power amplifier (PA)
with a low-loss slotline-based power combing technique is
proposed. The proposed slotline-based power combiner consists
of grounded coplanar waveguide (GCPW)-to-slotline transitions
and folded slots to simultaneously achieve power combining
and impedance matching. This technique provides a broadband
parallel–series combining method to enhance the output power
of PAs at mm-Wave frequencies while m