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A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR
一款50Gb/s PAM-4硅光发射器,采用集总段MZM设计,实现高带宽和线性调制。
50Gb/s, 9.8dB ER, 0.99 level mismatch ratio, 1.39pJ/bit/dB FoM, 682mW power
硅光子PAM-4调制马赫-曾德尔调制器光发射器高速互连
▸采用集总段马赫-曾德尔调制器(LS-MZM)实现高带宽PAM-4调制
▸多段驱动与调制器协同设计,无需高功耗线性驱动器
▸采用段内复用和时钟相位插值技术提高信号完整性
Abstract
This article presents a 50-Gb/s optical transmit- ter (TX), consisting of a 40-nm distributed CMOS driver and a 180-nm silicon-photonic modulator. A lumped-segment Mach–Zehnder modulator (LS-MZM) is developed for high bandwidth (BW) four-level pulse amplitude (PAM-4) modulation. A multi-segment driver with limiting outputs is co-designed, which is distributed into each LS-MZM segment. By grouping these LS-MSM segments in a thermometer code, high-linearity modulation is realized without the need of power-hungry high- swing linear drivers. To improve the optical PAM-4 signal integrity, in-segment multiplexing along with clock phase interpo- lation is adopted to synchronize the electrical and optical signals across all segments. The hybrid coupling between the driver and modulator is devised to boost the BW of the high-speed data path, while a half-rate clock and data recovery (CDR) circuit is integrated to remove the accumula ted jitter. Measurements show that the TX exhibits an extinction ratio (ER) of up to 9.8 dB and a 0.99 ratio of the level mismatch. A figure-of-merit (FoM) of 1.39 pJ/bit/dB corresponds to a 682-mW power, which can be further reduced by 40%, at the cost of a degraded ER of 4 dB. Manuscript received August 7, 2021; revised October 23, 2021; accepted November 29, 2021. Date of publication December 28, 2021; date of current version February 24, 2022. This article was approved by Associate Editor Farhana Sheikh. This work was supported in part by the National K