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JSSC 2022第5期Clocking & PLLs65nmCrystal Oscillator

A 32-MHz, 34- μW Temperature-Compensated RC Oscillator Using Pulse Density

一种采用脉冲密度调制的32MHz 34μW温度补偿RC振荡器,通过双温度修调和电阻温度系数补偿实现高精度频率输出。
32MHz, 34μW, 530ppm精度, 8.4ppm/°C, 80ppm/V电压灵敏度, 2.5ppm艾伦方差, 1μW/MHz能效
RC振荡器温度补偿脉冲密度调制频率锁定环CMOS
使用脉冲密度调制技术控制并联电阻组合以补偿温度系数
仅需在两个温度点进行修调即可实现全温度范围稳定性
基于频率锁定环(FLL)架构实现低功耗高精度振荡
Abstract
Highly stable on-chip frequency references offer the possibility of replacing crystal oscillators in many cost- and form-factor-constrained applications. However, achieving good frequency stability in a power-efficient manner across process, voltage, and temperature variations possess many design challenges. This article describes these challenges and presents a method for improving the integrated RC oscillator’s frequency accuracy by overcoming them. We show that the impact of resistor temperature coefficient (TC) on the accuracy of output frequency can be mitigated by using a parallel combination of two switched resistors that are digitally controlled by pulse-density modulated sequences. By trimming at only two temperatures, a prototype frequency-locked loop (FLL)-based 32-MHz oscilla- tor fabricated in a 65-nm CMOS process achieves an inaccuracy of 530 ppm (8.4 ppm/ ◦C), 80-ppm/V voltage sensitivity, 2.5-ppm Allan deviation, and 1- µW/MHz power efficiency.