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A Multi-Band 16–52-GHz Transmit Phased Array Employing 4 × 1 Beamforming IC With 14–15.4-dBm Psat for 5G NR FR2 Operation
本文介绍了一种支持5G NR FR2频段的毫米波多频段发射相控阵设计,采用SiGe BiCMOS工艺的波束成形芯片和Vivaldi天线阵列。
峰值增益28.3 dB,输出P1dB 13.5–14.7 dBm,Psat 14–15.4 dBm,20–50 GHz
毫米波相控阵5G NR FR2SiGe BiCMOS波束成形
▸采用宽带16–52 GHz 4×1 Tx波束成形芯片
▸使用锥形槽Vivaldi天线阵列
▸支持64-QAM波形,实现2.4 Gb/s数据速率
Abstract
This article introduces a millimeter-wave (mm-wave) multi-band transmit (Tx) phased-array design supp- orting the fifth-generation (5G) new radio frequency range 2 (NR FR2) bands. An eight-element phased-array module is presented employing two wideband 16–52 GHz 4 ×1 Tx beamformer chips and tapered slot Vivaldi antenna array. The beamformer chips are designed in a SiGe BiCMOS process and flipped on a printed circuit board (PCB). The SiGe integrated circuit (IC) has four differential radio frequency (RF) beamforming channels each consisting of an active balun, analog adder-based phase shifter (PS), variable gain amplifier (VGA), and a two-stage class-AB power amplifier (PA). The RF input signal is distributed to the four channels using a compact Wilkinson network. The measured peak gain is 28.3 dB with 13.5–14.7 dBm output P 1d B and 14–15.4 dBm Psat at 20–50 GHz. Each channel dissipates 250 mW from 2 V and 3-V supplies at P1d B.T h e beamformer chip is tested using 64-QAM waveforms and achieves a data rate of 2.4 Gb/s at 5.2% rms EVM and 9.6-dBm average power. The eight-element phased-array module shows a broadband performance with excellent patterns and ±60 ◦ scanning capability and with a peak effective isotropic radiated power (EIRP) of 32–34 dBm at 19.5–51 GHz. At an EIRP of 21–22 dBm, 400-MHz 256-QAM 5G-NR compliant waveforms are transmitted with <2.98% EVM demonstrating 5G NR FR2 operation. To the author’s knowledge, this work achieves the highest bandwidth phased array wit