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JSSC 2022第5期RF & Wireless45nm

High Efficiency D-Band Multiway Power Combined Amplifiers With 17519-dBm Psat and

采用八路低损耗功率合成的D波段高效功率放大器，在CMOS工艺中实现高饱和输出功率。
45nm CMOS, 1.2V, 16.8-19dBm Psat, 11.7%-14.2% PAE
D波段功率放大器CMOS功率合成高效
▸八路低损耗功率合成技术
▸四路balun-STL合成器与QWL TL合成器结合
▸在D波段CMOS工艺中实现最高Psat和OP1dB
Abstract
This article presents fully integrated power ampli- fiers (PAs) with eight-way low-loss power combining for D-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight-way power combining (four-way differential) common source (C.S.) and cascode amplifiers are implemented using four-stage differential PA unit cells as building blocks. The eight-way power combining network is composed of a four- way balun-short-transmission- line (balun-STL) combiner and a conventional quarter wavelen