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A CMOS Dual-Mode Brain–Computer Interface Chipset With 2-mV Precision Time-Based Charge Balancing and Stimulation-Side Artifact Suppression Haoran Pu , Student Member , IEEE
一款用于双向脑机接口的CMOS双模芯片组,具有2mV精度时间电荷平衡技术。
40V兼容电流刺激器,12.75mA最大电流,180nm CMOS工艺
脑机接口神经刺激数据采集电荷平衡CMOS
▸时间电荷平衡技术(TBCB)实现2mV精度
▸双模数据采集架构支持全带和基带操作
▸刺激侧轮廓整形(SSCS)技术抑制45dB伪影
Abstract
This article presents a multipolar neural stimula- tion and mixed-signal neural data acquisition (DAQ) chipset for fully implantable bi-directional brain–computer interfaces (BD-BCIs). The stimulation system employs four 40 V compliant current-stimulators, each capable of sourcing/sinking a maximum 12.75 mA stimulation current, connected to 16 output channels through a high-voltage (HV) swit ch fabric. A novel time-based charge balancing (TBCB) technique is introduced to reduce the residual voltage on the electrode-electrolyte interface during the inter-pulse time interval, achieving 2 mV charge balancing precision. Additionally, an analytical study of the charge bal- ancing accuracy for the proposed technique is provided. The recording system incorporates a dual-mode DAQ architecture that consists of a 32-element front-end array and a mixed-signal back-end including analog-to-digital converters (ADCs) for both training (i.e., full-band) and decoding (i.e., baseband) opera- tions. Leveraging the flexibility of the multipolar operation, stimulation-side contour shaping (SSCS) artifact cancellation is adopted to significantly suppress stimulation artifacts by up to 45 dB. SSCS method prevents the recording front-ends from saturation and greatly relaxes the dynamic range requirement of the recording system, enabling a truly bi-directional operation. The prototype chipset is fabricated in an HV 180-nm CMOS process and demonstrates a significant performance improvement compared to th