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Even-Harmonic Class- E CMOS Oscillator Mohammad Barzgari Student Member IEEEA
提出一种基于ZVS和ZDS条件的偶次谐波Class-E CMOS振荡器，具有优异的相位噪声性能。
4GHz, -152.75dBc/Hz@10MHz, 197.9dB FoM, 10.6%调谐范围
Class-E振荡器零电压开关偶次谐波相位噪声CMOS
▸创新点1：采用1:1变压器定制谐振腔，通过高Q值谐振在基波和二次谐波频率，实现被动电压增益，提升振荡器效率（电路创新）
▸创新点2：满足零电压开关（ZVS）和零导数开关（ZDS）条件，显著降低晶体管电压电流波形重叠，从而减少相位噪声并提高功率效率（方法创新）
▸创新点3：利用半正弦电压波形拓宽平坦区，使脉冲灵敏度函数（ISF）在此区域可忽略，进一步降低相位噪声（方法创新）
▸创新点4：在0.18-µm CMOS工艺下实现4 GHz振荡频率，相位噪声低至-152.75 dBc/Hz @10MHz，FoM达197.9 dBc/Hz，性能优越（系统创新）
Abstract
This article proposes the theory and implementation
of an even-harmonic class- E CMOS oscillator that displays an
excellent phase noise performance. Starting from zero voltage
switching (ZVS) and zero derivative switching (ZDS) conditions,
expressions for drain voltage and current waveforms are derived.
Based on a 1:1 transformer, a custom-designed tank is pro-
posed, which satisfies ZVS and ZDS conditions for the core
transistors, provides high- Q resonances at both fundamental
and second harmon