JSSC 2022第6期RF & Wireless130nm BiCMOS SiGePLL

Low-Loss Heterogeneous Integrations With High Output Power Radar Applications at

该研究提出了一种94GHz高性能紧凑型频率调制连续波雷达传感器设计，采用异构集成技术实现高输出功率和低损耗。

22dBm输出功率，10.2dB噪声系数，55dB动态范围，11.7cm距离分辨率

94GHz雷达异构集成SiGe MMICGaN功率放大器MEMS光敏薄膜

▸创新点1：异构集成技术（HI）——通过将X-band CMOS、W-band SiGe和W-band GaN三种不同工艺的芯片集成，实现了高性能和高紧凑度的雷达传感器，显著提升了系统整体性能。

▸创新点2：硅基MEMS光敏复合薄膜工艺——开发了一种新型的硅基MEMS光敏复合薄膜工艺，提供了极高密度的集成和极低插入损耗的芯片间互连，优化了信号传输效率。

▸创新点3：低损耗互连设计——设计了特殊的Bonding-SIW-WG过渡结构，确保了异构集成前端与天线之间的低损耗连接，实测插入损耗仅为2.3 dB，提升了系统整体性能。

▸创新点4：高性能雷达传感器设计——该雷达传感器实现了22 dBm的高输出功率和10.2 dB的低双边带噪声系数，提供了55 dB的动态范围和11.7 cm的距离分辨率，适用于长距离目标检测。

Abstract

This study presents a design of a 94-GHz high-performance and highly compact frequency-modulated continuous-wave radar sensor. In this sensor, an X-band CMOS- based all-digital phase-locked loop chip, W-band SiGe-based transceiver monolithic microwave integrated circuit (MMIC), and W-band GaN-based MMIC power ampliﬁer (PA) are heteroge- neously integrated (HI). Each part of the 130-nm bipolar com- plementary metal-oxide-semiconductor (BiCMOS) SiGe-based transceiver MMIC is designed to include a