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JSSC 2022第8期Power Management28nmLDOCharge Pump

A 0.5–1 V , −68 dB Power Supply Rejection Capacitorless Analog LDO Using V oltage-to-Time Conversion in 28-nm CMOS

提出一种基于电压-时间转换技术的模拟LDO,在低于1V电源电压下实现高电源抑制比。
28nm CMOS, 0.5-1V, -68dB PSR@1kHz, 150mA负载
低压LDO电源抑制比电压时间转换电荷泵瞬态响应
采用电压-时间转换技术实现高PSR
集成电荷泵提供理论上无限直流增益
引入时间转换信号的斜率增强路径以提升瞬态响应
Abstract
This article proposes an analog low-dropout (LDO) regulator using the voltage-to-time conversion technique to achieve high power-supply-rejection (PSR) at low supply voltages of less than 1 V . Integrating the time-domain signal into the current using a charge pump (CP) provides infinite dc gain, in principle, so that good regulation and high PSR can be achieved. Furthermore, a slew enhancement path using a time- converted signal is proposed to obtain a fast transient response even at low power supply voltages, and an auxiliary feedforward circuit has also been included to ensure wide load range stability. The proposed LDO designed to drive a 100-pF on-chip load capacitor and 150-mA load current was fabricated on a 28-nm CMOS process. The test measurement results show that the proposed LDO can operate in the 0.5–1-V i nput voltage range and achieved a high PSR of −52 to −68 dB at 1 kHz and −20 to −30 dB at 1 MHz, corresponding to the input voltage. Owing to the slew enhancement path, undershoot and overshoot were suppressed to 94 and 91 mV , respectively, for a 149-mA, 40-ns load current step.