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A Novel 61.25 GHz Monostatic CMOS Interrogator for Batteryless Backscattering RFID Solutions Zoltán Tibenszky , Member , IEEE, Mengqi Cui , Thomas Klosa
本文介绍了一种61.25 GHz单静态CMOS RFID询问器的设计与分析。
22 nm FD-SOI, 0.022 mm² active area
RFID单静态CMOS61.25 GHzFD-SOI
▸利用发射与入射波的干扰解调信号
▸插入功率放大器和天线之间,插入损耗低
▸采用22 nm FD-SOI技术,结构简单
Abstract
This article presents the analysis, design, and characterization of a 61.25 GHz radio frequency identification (RFID) interrogator. Monostatic RFID systems have to solve the challenge of the transmit (TX)-to-receive (RX) leakage, which could desensitize the interrogator. Instead of s uppressing or canceling this leakage, the interference of the transmitted and incident waves is exploited to demodulate the incident signal. The structure can be inserted between the power amplifier (PA) and the antenna pad of existing transmitters. It has a lower insertion loss (IL) than other ON-chip isolation structures used in monostatic interrogators reported to date. The transceiver front-end was fabricated on a 22 nm fully depleted silicon on insulator (FD-SOI) technology, and has a simple structure, where the low-power receiver requires 0.022 mm 2 active area. The die was mounted on a radio frequency (RF) printed circuit board (PCB) and a general circuit board was used for baseband processing in the measurements.