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JSSC 2022第8期Other180nm

Static CMOS Physically Unclonable Function Based on 4T V oltage Divider With 0.6%–1.5% Bit Instability at 0.4–1.8 V Operation in 180 nm Massimo Vatalaro , Raffaele

提出基于4T电压分压器的静态CMOS物理不可克隆函数,具有高随机性和稳定性。
0.6%比特不稳定性(1.8V, 25°C), 0.493平均归一化PUF间汉明距离, 0.0016平均归一化PUF内汉明距离
物理不可克隆函数CMOS硬件安全电压分压器亚阈值
基于亚阈值4T电压分压器的PUF位单元
仅使用PMOS的2T电路实现随机性
无需后硅稳定性增强技术的高稳定性
Abstract
This article introduces a novel class of static and monostable CMOS physically unclonable functions (PUFs) for hardware security applications. The PUF bitcell is based on a sub- threshold four-transistor (4T) voltage divider as the core block, along with an inverter as the output stage. The 4T voltage divider consists of two series-connected and nominally identical PMOS- only two-transistor (2T) circuits. This allows inherently random bit generation assisted by mismatch while also ensuring inherent robustness against environmental variations. A 180-nm test chip was characterized to validate our solution. Measurements of the 4T bitcell core prove its capability to generate random voltages with high dispersion (i.e., close to either ground or supply voltage levels) and high stability across a wide range of environmental conditions. The statistical PUF performance was evaluated on an 8 × 32 bitcell array without applying any post-silicon stability-enhancement technique. Raw measurements reveal a bit instability of only ∼ 0.6% at golden key (GK) conditions (1.8 V and 25 ◦C), which increases up to 1.5% at 0.4 V and room temperature. When compared to prior art, our solution shows competitive performance in terms of stability, uniqueness (mean normalized inter-PUF Hamming distance (HD) of 0.493), and reproducibility (mean normalized intra-PUF HD of 0.0016), at the cost of more area-hungry design ( ∼ 7200-F 2 bitcell area).