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JSSC 2022第9期Other90nm

Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing

一种抗辐射多比特触发器系统,具有嵌入式时序预错误检测功能。
ST BCD 90-nm技术实现,基于ARM Cortex M4微处理器验证
抗辐射多比特触发器时序预错误检测动态电压频率调整单粒子效应
抗单粒子翻转和单粒子瞬态辐射效应
嵌入式时序预错误检测实现闭环优化工作点
支持动态电压频率调整和老化/辐射诱导时序退化检测
Abstract
This article presents the design, implementation methodology, and validation of a multi-bit flip-flop (FF) system that provides tolerance against single-event upsets (SEUs) and single-event transients (SETs) caused by radiation strikes. The proposed solution also has embedded timing pre-error sens- ing capability, which enables closed-loop integration of digital systems to work at optimal operating point (OPP) without any fail. It allows efficient real-time dynamic voltage frequency scaling (DVFS) implementation in the digital system. It helps detect aging-related and total ionizing dose (TID)-induced timing degradation in digital circuits. It can be implemented with any standard digital cell library (non-rad-hard), thereby providing a cost-effective solution for rad-hard applications. The design is implemented in ST BCD 90-nm technology in multiple configu- rations of bit sizes. A digital system based on ARM cortex M4 microprocessor has also been implemented with the proposed FF and put on silicon for testing to validate various capabilities of the proposed design. The results are presented based on simulations, electrical characterization, and radiation tests.