← 返回 JSSC 论文列表JSSC 2022第9期RF & Wireless0.13μm SiGe BiCMOS
W-band Scalable 2 2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCM
W波段SiGe BiCMOS工艺的2×2相控阵收发芯片组，支持高数据率无线通信。
TX单通道IF-to-RF增益26dB, OP1dB 11dBm; RX RF-to-IF增益19.5dB, 噪声系数7.7dB
W波段相控阵SiGe BiCMOS高数据率无线通信
▸改进型相位反转可变增益放大器实现的6位有源移相器
▸采用并联电感降低噪声的低噪声放大器设计
▸新型微型功率合成器
Abstract
This article presents a pair of W-band phased-array
transmitter (TX) and receiver (RX) chipsets in a 0.13- μmS i G e
BiCMOS process for high data-rate wireless communication.
Both the chips integrate four compact front-end channels in 2 ×
2 distribution, and the distance between the adjacent RF pads is
less than 1.8 mm (0.56 λ at 90 GHz) to fit for the tight antenna
array and enable array scaling by tiling multiple unit cells. A
6-bit active phase shifter based on the improved phase-inverting
var