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JSSC 2022第10期Clocking & PLLs65nm

A 0.68–0.72-THz 2-D Scalable Radiator Array With −3-dBm Radiated Power and 27.3-dBm EIRP in 65-nm CMOS

提出一种新型2D可扩展耦合谐波振荡器阵列,实现694GHz高频辐射
694GHz下27.3dBm EIRP,-3dBm辐射功率,754mW功耗
太赫兹辐射耦合振荡器谐波阵列CMOS定向波束
创新点1:2D可扩展架构 - 提出了一种新颖的二维可扩展耦合谐波振荡器阵列架构,通过水平和垂直方向的相位控制(水平异相/垂直同相耦合),实现了694GHz频段的高功率辐射和相干功率合成,支持阵列规模的灵活扩展。
创新点2:紧凑对称单元设计 - 采用双振荡器+双缝隙天线的对称单元结构,在0.61mm²核心面积内集成32个辐射单元,实现273dBm EIRP的功率密度(0.52mW/mm²),创下硅基THz辐射阵列的功率面积比纪录。
创新点3:第三谐波功率辐射 - 通过基频耦合和谐波辐射的协同设计,在第三谐波(694GHz)实现-3dBm辐射功率和27.3dBm EIRP,相比传统基频辐射方案提升效率(0.066% DC-to-THz)。
创新点4:宽频调谐技术 - 通过偏置电压调控实现5.26%频率调谐范围(679.4-716.1GHz),同时保持-73dBc/Hz@1MHz的相位噪声性能,突破THz源频率灵活性的技术瓶颈。
Abstract
A novel and compact 2-D scalable architecture of coupled harmonic oscillator array is proposed for high- power radiation beyond 600 GHz. The compact and symmetric scalable unit cell comprises two oscillators with two slot antennas radiating the third-harmonic power. Each unit cell is horizontally coupled out-of-phase and vertically in-phase with adjacent cells at the fundamental frequency. Therefore, coherent radiation and power combining are achieved at the third harmonic. A4 × 4 array prototype (32 radiating elements) is designed and fabricated in a 65-nm CMOS technology. An elliptical Teflon lens is attached at the backside of the chip for a highly directive beam. An effective isotropic radiated power (EIRP) of 27.3 dBm and an output power of −3 dBm are measured at 694-GHz with 754-mW power consumption under 1.2-V supply voltage, implying a dc-to-terahertz (THz) efficiency of 0.066%. The core design occupies a chip area of 0.61 mm 2, and the entire chip area is 0.97 mm2, leading to a 0.52-mW/mm 2 area efficiency. The peak EIRP of 27.8 dBm and the radiated power of −2.4 dBm are measured at 699 GHz under 1.3-V supply voltage. A frequency tuning range of 5.26% from 679.4 to 716.1 GHz is measured by varying bias and supply voltages. The measured phase noise at 1-MHz offset is −73 dBc/Hz at 694 GHz. To the best of our knowledge, the designed array has the highest radiated power, radiated power per area, EIRP, frequency tuning range, and dc-to-THz efficiency among silicon-based scal