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A 20F 2Bit Current-Integration-Based Differential NAND -Structured PUF for Stabl
提出一种基于电流积分的差分NAND结构PUF，用于低成本物联网安全。
20F²/bit面积，0.145%/0.1V和0.120%/10°C的V/T变化容忍度
物理不可克隆函数电流积分NAND结构物联网安全阈值电压变化
▸采用电流积分方案通过电容充电延迟比较生成响应位
▸利用NAND闪存类似阵列结构实现面积高效的最小尺寸MOSFET选择
▸提出基于电流积分的稳定化方案，通过丢弃或重映射充电延迟差异小的晶体管对
Abstract
A current-integration-based differential NAND -
structured physically unclonable function (PUF) with 20F 2 area
per bit is proposed for low-cost IoT security. Current integration
scheme with a capacitor is adopted to generate a response bit
by comparing the delay of capacitor charging through pair
of selected MOSFET transistors. For area-efficient implemen-
tation, minimum-sized MOSFETs are selected from
NAND -flash-
like array structure. By operating selected MOSFET pairs in
moderate inversion mo