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JSSC 2022第10期Power Management0.11μm CMOS

A BJT-Based Temperature-to-Frequency Converter With ±1 ◦C( 3σ) Inaccuracy From − 40 ◦Ct o 140 ◦C for On-Chip

基于BJT的温度-频率转换器,在-40°C至140°C范围内实现±1°C的3σ精度。
±1°C(3σ), 3.1μW功耗, 0.025mm²面积
温度传感器BJT弛豫振荡器CMOS数字修调
采用电容翻转技术消除比较器偏移
使用三重阱结构的NMOS开关抑制漏电流
集成数字修调提高温度精度
Abstract
This article presents a bipolar junction transistor (BJT)-based CMOS temp erature-to-frequency converter (TFC). A relaxation oscillator (ROSC) consisting of an integrating capac- itor, a current source, and a comparator converts the ratio of the complementary-to-absolute-temperature (CTAT) voltage to the proportional-to-absolute-temperature (PTAT) voltage created by the BJT core to frequency. To improve the temperature accuracy, we incorporate a capacitor flipping technique to remove an offset of the comparator and a settling time error when resetting the integrating capacitor. Moreover, bootstrapped NMOS switches with the triple well structure are implemented to suppress leakage current and prevent from forming parasitic BJTs when the negative CTAT is applied to them by the proposed flipping technique. The prototype fabricated in a 0.11- μm CMOS process consumes 3.1-μW power and occupies a 0.025-mm 2 active area. Measurements of 18 samples with the digital trimming show an inaccuracy of ±1 ◦C( 3σ) from −40 ◦C to 140 ◦C. The area- and energy-efficient TFC is applicable to monitor the temperature inside integrated chips.