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JSSC 2022第10期RF & Wireless40nmPower Amplifier

A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Sta

本文提出了一种用于毫米波5G应用的宽带系列Doherty功率放大器。
40nm CMOS, 20.4 dBm PSAT, 39.1%/34% PAE at 0-/6-dB PBO
毫米波Doherty功率放大器5G宽带CMOS
紧凑的两步阻抗反转型系列Doherty功率合成器
后硅片阶段被动验证方法
宽带操作的AM-AM/AM-PM性能分析
Abstract
This article presents a wideband series-Doherty power amplifier (SDPA) for millimeter-wave (mm-wave) fifth- generation (5G) applications. I t features a compact two-step impedance inverting-based series-Doherty power combiner that provides broadband close-to-perfect power back-off (PBO) efficiency enhancement. The amplitude-to-amplitude (AM–AM)/amplitude-to-phase (AM–PM) performance of the load-modulated Doherty power amplifier for broadband oper- ation is analyzed. We also devise a post-silicon int