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An On-Chip Relaxation Oscillator in 5-nm FinFET Using a Frequency-Error
5nm FinFET工艺下基于频率误差反馈的片上弛豫振荡器,提升抗噪性和稳定性。
5nm FinFET, 0.9V/1.2V, 77MHz, 0.84mW, 0.0152mm²
片上振荡器频率误差反馈5nm FinFET时间间隔误差抗噪性
▸创新点1:频率误差反馈环路(FEF)是一种方法创新,通过实时监测和校正振荡器的频率误差,有效抑制低频噪声,提升时间间隔误差(TIE)性能至3ns(10K周期),相比无FEF设计提升3倍。
▸创新点2:电路创新体现在FEF环路的设计上,通过优化反馈路径和控制机制,在不增加周期抖动的前提下改善TIE,解决了传统振荡器中TIE与抖动难以兼顾的问题。
▸创新点3:系统创新在于FEF环路集成了电源和温度补偿功能,在1.1-1.35V电源变化下频率偏差仅±0.25%,-40°C至125°C温度范围内偏差±0.3%,显著提升了环境适应性。
▸创新点4:采用5nm FinFET工艺实现77MHz振荡器,面积仅0.0152mm²且功耗0.84mW,展示了先进节点下高集成度与低功耗的协同优化。
Abstract
A vailability of a reliable ON-chip oscillator can secure a system-on-chip (SoC) against physical clock attacks by enabling applications such as boot-up using ON-chip oscillator and hardware clock monitors. This article proposes a frequency- error feedback (FEF) loop-based relaxation oscillator for such applications. It suppresses the low-frequency noise and improves the time interval error (TIE) without degrading the period jitter . It also stabilizes the oscillator against s upply and temperature variations. A 77-MHz oscillator prototype is fabricated in a commercial 5-nm FinFET process. Operating from 0.9-V digital and 1.2-V analog supplies, the prototype consumes a total of 0.84 mW and occupies an area of 0.0152 mm 2.I ta c h i e v e saT I Eo f 3 ns over 10 K cycles which is 3 × better than an oscillator without an FEF loop. Chip samples are picked from four wafer split lots. The worst case frequency variation measured from 16 samples is ±0.25% across an analog supply change of 1. 1–1.35 V, while a variation of ±0.3% is measured over − 40 to 125 ◦C temperature from eight samples.