← 返回 JSSC 论文列表JSSC 2022第12期Other130nm SiGe BiCMOSPower Amplifier
A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power
本文提出了一种基于槽线的D波段多赫蒂功率放大器，采用创新的槽线-GCPW耦合结构实现高效功率合成。
峰值输出功率22.7dBm@110GHz，功率附加效率18.7%，核心面积1.1×0.53mm²
D波段多赫蒂功率放大器槽线耦合器SiGe BiCMOS毫米波
▸采用槽线-GCPW耦合结构降低插入损耗
▸实现紧凑型八路功率合成器
▸支持主动负载调制的阻抗变换器设计
Abstract
This article presents a D-band Doherty power
amplifier (PA) featuring a low-loss and compact slotline-based
eight-way power combiner to improve the saturated output
power and power back-off (PBO) efficiency. The proposed
combiner consists of grounded coplanar waveguides (GCPWs),
slotlines, and SLOT-GCPW coupling structures. Instead of the
conventional transformer structure, the proposed SLOT-GCPW
coupling structure effectively reduces insertion loss, increases the
common-mode rejection, and encoun