← 返回 JSSC 论文列表JSSC 2022第12期RF & Wireless22nm FinFETPLL
A Fully Integrated 160-Gbs D-Band Transmitter Achieving 11-pJb Efficiency in 22-n
22nm FinFET工艺下实现160Gb/s速率的全集成D波段发射器
160Gb/s 16QAM, -17dB EVM, +0.8dBm输出功率, 1pJ/b能效
D波段发射器射频数模转换器亚采样锁相环正交调制毫米波通信
▸采用宽带射频数模转换器(RF-DAC)架构
▸集成4:1复用器与亚采样正交锁相环(PLL)
▸内置高速数据生成SRAM/PRBS模块
Abstract
This work presents a fully integrated 140-GHz
transmitter (TX) achieving a data rate of 160 Gb/s with
∼1-pJ/b efficiency in the 22-nm Intel FinFET technology. The
TX leverages a wideband radio frequency digital to analog
converter (RF-DAC) architecture with embedded 4:1 multi-
plexer, and it is integrated with a sub-sampling quadrature
phase-locked loop (PLL), frequency tripler, local oscillator (LO)
buffers, wideband two-stage power amplifier (PA), and on-chip
SRAM/pseudorandom binary sequence (P