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A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET
22nm FinFET工艺下实现160Gb/s速率的全集成D波段发射器
160Gb/s 16QAM, -17dB EVM, +0.8dBm输出功率, 1pJ/b能效
D波段发射器射频数模转换器亚采样锁相环正交调制毫米波通信
▸采用宽带射频数模转换器(RF-DAC)架构
▸集成4:1复用器与亚采样正交锁相环(PLL)
▸内置高速数据生成SRAM/PRBS模块
Abstract
This work presents a fully integrated 140-GHz transmitter (TX) achieving a data rate of 160 Gb/s with ∼1-pJ/b efficiency in the 22-nm Intel FinFET technology. The TX leverages a wideband radio frequency digital to analog converter (RF-DAC) architecture with embedded 4:1 multi- plexer, and it is integrated with a sub-sampling quadrature phase-locked loop (PLL), frequency tripler, local oscillator (LO) buffers, wideband two-stage power amplifier (PA), and on-chip SRAM/pseudorandom binary sequence (PRBS) for high-speed data generation. The TX achieves 120/160-Gb/s 16 quadratic- amplitude modulation (QAM) with −19/−17-dB error vector magnitude (EVM) at an output power of +1.5/+0.8 dBm.