A Monolithic GaN Power IC With On-Chip Gate Driving Level Shifting and Temperatu

Abstract

To unlock the full potential of monolithic gallium nitride (GaN) power integrated circuits, this article explores the feasibility of developing efficient and reliable on-chip gate driving and level shifting solutions, which fundamentally facilitate the on- chip implementation of GaN power circuits. As results, a self- bootstrapped hybrid (SBH) gate driving scheme and its circuitry are developed, which achieve rail-to-rail dynamic gate driving in normal operation and robust static gate driving in