Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for

Abstract

In this article, the proposed monolithic gallium nitride (GaN)-based driver uses the diode-emulated technique to reduce reverse conduction through a meta-stable fast (MSF) comparator with sub-0.2-ns deadtime. In addition, an active bootstrap controller with a fast discharge loop is used to reduce parasitic effects to improve the driving capability, thereby increasing the switching frequency. Furthermore, the proposed gate driver with dual dv/dt control can reduce the gate-ringing during turn-on/