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JSSC 2023第1期RF & WirelessDRAM

A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX Optimized WCK Operation and A

首款采用T-coil技术的16Gb GDDR6 DRAM,通过合并多路复用器TX和优化WCK操作实现27Gb/s/pin带宽
27 Gb/s/pin with 1.35 V
GDDR6T-coilDRAM带宽优化数据时钟
首次在DRAM工艺中实现T-coil技术
采用合并多路复用器(TX)优化数据传输
使用替代数据总线(ADB)解决数据总线频率限制
Abstract
This article introduces a 16-Gb T-coil-based graphics double-data-rate 6 (GDDR6) dynamic random access memory (DRAM) with merged-multiplexer (MUX) transmitter (TX), optimized data clock (WCK) operation to enhance I/O bandwidth. T-coil is implemented for the first time in a DRAM process. Moreover, an alternative-data-bus (ADB) is employed to solve the frequency limit of the data bus. The proposed T-coil- based GDDR6 DRAM achieves 27 Gb/s/pin with 1.35 V in a DRAM process.