JSSC 2023第2期Power Management0.5µmBuck-Boost

A 10 to 20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-μA Leakage Current

提出一种反相降压-升压驱动GaN驱动器，采用Vth跟踪技术降低漏电流至亚1μA，并集成EMI抑制功能。

0.5µm CMOS, 10-20V, 20MHz, 120V/ns, 95.8%峰值效率

GaN驱动器反相降压-升压漏电流抑制EMI抑制高效转换

▸Vth跟踪技术降低漏电流至亚1μA

▸Miller平台检测器和EMI抑制频率控制器抑制EMI

▸快速电平转换器和斜率控制实现20MHz开关频率

Abstract

This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5- µm CMOS process, the V th tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 µA. To suppress the electromagnetic interference (EMI) caused by the ringing volt- age at drain of the GaN sw