JSSC 2023第2期mm-Wave130nm SiGe BiCMOS

A 211-to-263-GHz Dual- LC -Tank-Based Broadband Power Ampliﬁer With 14.7-dBm PSA T and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS Jiayang Y u, Student Member , IEEE,J i x i nC h e n , Member , IEEE, Peigen Zhou , Student Member , IEEE, Huanbo Li , Zuojun Wang

本文提出了一种基于双LC谐振腔的宽带功率放大器，采用低损耗四路功率合成器，实现了211至263 GHz的高效功率放大。

峰值功率增益16.4 dB，饱和输出功率14.7 dBm，峰值效率3.13%

功率放大器宽带功率合成器Marchand巴伦双LC谐振腔

▸创新点1：改进的零度合成器（ZDC）通过优化功率分配网络，显著降低了插入损耗，实现了宽带匹配和高效功率合成，提升了PA的整体效率和输出功率。

▸创新点2：三导体Marchand巴伦采用创新的三导体结构，结合双LC谐振腔技术，实现了宽带匹配和低损耗功率合成，扩展了工作带宽至52 GHz（211-263 GHz）。

▸创新点3：双LC谐振腔技术通过合并两个谐振器，等效为变压器多谐振网络，显著提升了功率合成效率和带宽性能，PAE峰值达到3.13%。

▸创新点4：折叠式输入分配网络和紧凑功率合成方法大幅减小了芯片核心面积（770 µm × 280 µm），同时保持了高输出功率（14.7 dBm）和高增益（16.4 dB）。

Abstract

This article presents a broadband sub-terahertz (THz) power ampliﬁer (PA) with a low-loss four-way power combiner. The proposed power combiner consists of an improved zero-degree combiner (ZDC) and a three-conductor Marchand balun simultaneously achieving broadband matching and power combining. The proposed three-conductor Marchand balun adopts a dual- LC tank technique by merging two resonators, and it can be equivalent to a transformer-based multi-resonating network. The power distribution is realized by one input power splitter generating two pairs of differential signals and two parallel 1-to-2 active power splitters. This hybrid distribution driving network further enhances efﬁciency and power gain. Based on these improvements, a high-output-power sub-THz PA with superior efﬁciency has been fabricated in the 130-nm SiGe bipolar complementary metal oxide silicon ﬁeld effect transistor (BiCMOS) technology. The three-stage PA achieves a peak power gain of 16.4 dB, 3-dB small-signal gain bandwidth of 52 GHz from 211 to 263 GHz, a measured maximum saturated output power of 14.7 dBm at 224 GHz, and a peak power-added efﬁciency (PAE) of 3.13% at 220 GHz. The folded input splitter and extremely compact power combining methodology lead to a core area of 770 µm × 280 µm.