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JSSC 2023第2期RF & Wireless40nm

A CMOS Wideband Watt-Level 4096-QAM Digital Power Amplifier Using Reconfigurable P

40nm CMOS工艺宽带瓦级4096-QAM数字功率放大器,采用可重构功率合成变压器。
40nm CMOS, 1.1/2.5V, 峰值输出功率32.67dBm, 峰值效率45.1%, 支持4096-QAM
数字功率放大器宽带匹配可重构变压器4096-QAM谐波抑制
创新点1:采用可重构功率合成变压器宽带匹配网络,显著提升输出功率和带宽效率,实现1.2–3.6 GHz宽频带覆盖,峰值输出功率达32.67 dBm(电路创新)
创新点2:引入L-C电路谐波抑制技术,有效降低谐波干扰,提升基波信号输出功率,同时优化系统整体效率(方法创新)
创新点3:集成12位功率DAC抑制LO泄漏技术,大幅提高动态范围,支持高精度调制(如4096-QAM),EVM低至-43.0 dB(系统创新)
创新点4:结合上述技术实现多制式兼容(256/1024/4096-QAM),在50-MSyms/s下ACLR达-30.67 dBc,展现卓越线性度(系统级性能创新)
Abstract
In this article, a wideband watt-level digital power amplifier (DPA) with high efficiency and large dynamic range is presented in CMOS technology for wireless applications. To achieve high output power with enhanced operation band- width (BW), the wideband matching network based on a reconfigurable power-combining transformer is used. Meanwhile, the L–C circuit is used to suppress the harmonics, which further improves the output power of the fundamental signal. In addition, the LO leakage is suppre