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JSSC 2023第5期RF & Wireless65nm

A Hierarchical Self-Interference Canceller for Full-Duplex LPW AN Applications Achieving 52–70-dB RF Cancellation Hany Abolmagd , Student Member , IEEE, Raghav Subbaraman , Student Member , IEEE, Omid Esmaeeli , Student Member , IEEE, Yeswanth Guntupalli, Student Member , IEEE, Ahmad Sharkia , Student Member , IEEE

提出一种用于LPWAN基站的全双工自干扰消除芯片,采用分层消除技术实现高分辨率。
65nm CMOS, 1.2V, 44.28mW, 64dB RF SI消除
自干扰消除全双工LPWAN矢量调制器分层技术
创新点1:分层消除技术通过嵌套矢量调制器(VM)实现高分辨率自干扰消除,采用7位和两个6位级联结构,达到16位理论分辨率和>13位实测分辨率,显著提升消除能力而不增加过多功耗和面积。
创新点2:嵌套矢量调制器(VM)的创新电路设计,通过多级嵌套结构实现高分辨率干扰消除,每抽头仅占用0.21 mm²面积和12.3 mA电流,在1.2V电源电压下实现高效能。
创新点3:解耦阻抗匹配与抽头延迟实现的系统创新,利用频率转换电路实现大范围延迟(16 ns/33 ps至80 ns/150 ps),适应LPWAN信道的大群延迟和群延迟扩展需求,支持>100 dB的模拟自干扰消除。
创新点4:整体芯片在65 nm CMOS工艺下实现1.2 mm²面积和44.28 mW功耗,展示出在0.8 MHz带宽下64 dB的射频自干扰消除性能,在受控环境下可达70 dB,为LPWAN基站提供高效解决方案。
Abstract
We present a radio frequency self-interference (SI) canceller chip for low-power wide area network (LPW AN) basestations. T o enhance the cancellation capability without necessitating unreasonable resolution, power consumption, and area, we introduce a hierarchical cancellation technique using a nested vector modulator (VM) implementation. Nesting a 7-b and two 6-b stages, a 16-b theoretical and >13-b measured resolution is obtained per tap. LPW AN channels have large group delay and group delay spread in tens of ns, and a requirement for >100 dB of analog SI cancellation. To enable large ON -chip group delay, we leverage frequency translation circuits, and in comparison to prior art, decouple impedance matching requirement from tap delay implementation to realize range/resolution from 16 ns/33 ps to 80 ns/150 ps. We demonstrate 64 dB of RF SI cancellation over 0.8-MHz bandwidth (BW) with a three-tap implementation for an LPW AN wireless channel. For more controlled environments, up to 70-dB cancellation is shown. Each tap occupies 0.21 mm 2 of area and consumes 12.3 mA of current with a 1.2-V supply voltage. The whole chip occupies 1.2 mm 2 and consumes 44.28 mW of power in a 65-nm CMOS process.