Design Considerations for a Low-Power Fully Integrated MMIC Parametric Upconvert

Abstract

This article presents the detailed design proce- dure of a millimeter-wave low-power fully integrated monolithic millimeter-wave integrated circuit (MMIC) parametric upcon- version circuit in SiGe heterojunction bipolar transistor (HBT) BiCMOS technology. This article comprehensively describes the design considerations to fully exploit the abrupt C–V char- acteristics achieved by the inve stigated diode-connected HBT configuration that, compared with traditionally employed devices, presents a C m