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A Reflection-Mode N -Path Filter Tunable F r o m6t o3 1G H z Sandeep Hari , Student Member , IEEE, Cody J. Ellington
一篇关于6至31GHz反射模式N路径可调滤波器的IEEE JSSC论文,采用45nm SOI技术实现。
6-31GHz可调范围,最大3dB RF带宽0.47GHz,插入损耗<7dB
反射模式滤波器N路径滤波器可调滤波器SOI技术射频滤波器
▸创新点1:反射模式N路径滤波器设计(方法创新)。通过四相被动混频器实现带内高阻抗和带外50Ω匹配阻抗,利用开关的导通电阻实现信号反射与吸收,中心频率由本地振荡器频率设定,实现了6-31GHz的可调谐带通滤波功能。
▸创新点2:集成片上混合耦合器(电路创新)。将混合耦合器与混频器直接集成在45nm SOI工艺中,通过耦合器端口终止设计简化系统结构,同时保证带内信号反射和带外信号吸收的高效性。
▸创新点3:可调带宽的主动基带负载(系统创新)。通过可调谐的主动基带负载提供二阶电容响应,将滚降斜率提升至12 dB/octave,支持窄带(0.22 GHz)和宽带(1.22 GHz)两种模式切换,显著提高滤波器的频率选择性。
▸创新点4:低损耗与高线性度性能优化(性能创新)。在三种工作模式下均实现插入损耗<7 dB,带内输入三阶交调截点(IIP3)<−2.2 dBm,带外IIP3>11 dBm,同时功耗控制在75-320 mW范围内,平衡了滤波性能与能效。
Abstract
A 6-to-31-GHz reflection-mode N-path filter is implemented in 45-nm SOI technology. The filter includes an on-chip hybrid coupler with through and coupled ports termi- nated with four-phase passive mixers. Each mixer provides a high impedance in-band and a matched, 50- impedance out- of-band (OOB) that is provided by the ON-resistance of the switches. As such, in-band signals are reflected by the mixers, and OOB signals are absorbed. This enables reflection-mode bandpass filtering of the signal, with the center frequency set by the local-oscillator frequency. To increase selectivity, an active baseband (BB) load with adjustable bandwidth can be enabled to provide a second-order capacitive response, which increases the roll-off to 12 dB/octave. Measurements show that the filter can be tuned across 6–31 GHz with a maximum 3-dB RF bandwidth of 0.47 GHz for the passive BB and either 0.22 or 1.22 GHz for the active BB in narrowband or wideband modes. Filter insertion loss (IL) is <7 dB in all three modes, whereas the noise figure exceeds IL by 1 dB at 6 GHz and 11 dB at 29 GHz in the active-wide mode. The filter provides a return loss of <10 dB both in-band and OOB. In all three modes of the filter, the in-band input- referred third-order intercept point (IIP3) is <−2.2 dBm and the OOB IIP3 is >11 dBm, whereas the maximum in-band input- referred P1 dB is −2 dBm. Clock circuitry consumes 75–320 mW f r o m6t o3 1G H z ,w h e r e a st h ea c t i v eB B sc o n s u m e7 0m Wi n the wideband mo