← 返回 JSSC 论文列表JSSC 2023第8期RF & Wireless45nm SOI CMOS
A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency
一种基于时间交错多级开关电容的0.2-2 GHz可编程射频延迟元件,实现百纳秒级宽带延迟。
45nm SOI CMOS, 1V, 0.2-2GHz, 2.55-448.6ns可编程延迟, <0.12%延迟变化, 2.42ns延迟步进, 330ns/mm2面积效率, 26dB增益, 7.4dB噪声系数, 74mW功耗
射频延迟开关电容时间交错宽带可编程延迟
▸采用时间交错多级开关电容(TIMS-SC)技术实现百纳秒级宽带射频延迟
▸通过多级开关电容存储单元实现采样时间扩展
▸在宽温度范围内延迟变化极小,增益变化小于0.25 dB
Abstract
Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched- capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. The delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with <0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm2 area efficiency. Through the proposed approach, the device shows minimal delay change across a −40 ◦C to 85 ◦C temperature range and <0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2.