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JSSC 2023第8期RF & Wireless130-nm SiGe BiCMOS

A Dual-Polarization Silicon-Photonic Coherent Receiver Front-End Supporting 528 Gb/s/Wavelength Abdelrahman H. Ahmed

提出一种支持528 Gb/s的双极化硅光子相干接收前端,优化噪声和谐波失真。
75.5 dB增益, 42 GHz带宽, 18.5 pA/√Hz输入参考噪声
双极化硅光子相干接收TIA528 Gb/s
自动可重构TIA减少噪声和增益峰值
协作偏移和直流电流消除技术
硅光子收发器组件实现高数据速率
Abstract
Supporting advanced modulation schemes such as 16 quadrature-amplitude modulation (QAM) in a high- speed transimpedance amplifier (TIA) requires minimizing noise and total harmonic distortion (THD) across gain settings and frequency. Accordingly, our automatically reconfigurable TIA reduces base resistor noise, gain peaking, phase margin (PM) degradation, and fT degradation, operating on a single sense voltage and eliminating the need for multiple control loops. A collaborative offset and dc current cancellation technique is introduced to reduce offset-induced nonlinearity, while protecting the receiver (RX) against current overdrive. A prototype of the RX is fabricated on 130-nm SiGe BiCMOS process and demon- strates a maximum gain of 75.5 dB with 35.5 dB of dynamic range, 42-GHz bandwidth (BW), and a maximum gain averaged input-referred noise (IRN) of 18.5 pA/ √ Hz. The silicon-photonic transceiver assembly incorporating four such RXs achieves 25-dB required optical signal to noise ratio (ROSNR) for received optical power between –22 and 1 dBm at 50 Gbaud, and aggregate data rate of 528 Gb/s/λ at 66 Gbaud and 25-dB ROSNR.